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09:30 |
HL 96.1 |
Dependence of band gap bowing of epitaxial InxGa1−xN on composition, strain and ordering effects by first-principles calculations — •Ying Cui, Sangheon Lee, Gerard Leyson, Christoph Freysoldt, and Jörg Neugebauer
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09:45 |
HL 96.2 |
Ordering phenomena in InxGa1−xN grown epitaxially on GaN(0001) — •Sangheon Lee, Christoph Freysoldt, and Jörg Neugebauer
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10:00 |
HL 96.3 |
Island nucleation during double pulsed growth of InN with RF-MBE — •Andreas Kraus, Uwe Rossow, Heiko Bremers, and Andreas Hangleiter
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10:15 |
HL 96.4 |
The contribution has been withdrawn.
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10:30 |
HL 96.5 |
InGaN quantum wells grown on 2” semipolar GaN — •Tobias Meisch, Sabine Schörner, Junjun Wang, Klaus Thonke, and Ferdinand Scholz
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10:45 |
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Coffee break
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11:00 |
HL 96.6 |
Towards identification of the shallow donor oxygen in AlN photoluminescence spectra — •Martin Feneberg, Benjamin Neuschl, Klaus Thonke, Matthias Bickermann, and Rüdiger Goldhahn
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11:15 |
HL 96.7 |
Activation of a new europium center in Europium-implanted GaN by both Mg and Si codoping — •Jayanta Kumar Mishra, Torsten Langer, Uwe Rossow, Stepan Shvarkov, Andreas Wieck, and Andreas Hangleiter
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11:30 |
HL 96.8 |
Nonradiative recombination due to Ar implantation induced point defects in GaInN/GaN quantum wells — •Torsten Langer, Hans-Georg Pietscher, Holger Jönen, Uwe Rossow, Heiko Bremers, Dirk Menzel, and Andreas Hangleiter
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11:45 |
HL 96.9 |
Influence of Si- and Ge-doping on the properties of AlGaN layers — •Christoph Berger, Hartmut Witte, Armin Dadgar, Jürgen Bläsing, Peter Veit, Annette Diez, and Alois Krost
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12:00 |
HL 96.10 |
Optical properties of highly Ge doped GaN — •Christian Nenstiel, Max Bügler, Stephanie Fritze, Armin Dadgar, Hartmut Witte, Antje Rohrbeck, Jürgen Bläsing, Gordon Callsen, Alois Krost, and Axel Hoffmann
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