Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 97: ZnO
HL 97.1: Vortrag
Freitag, 15. März 2013, 09:30–09:45, H16
Controlled Growth of ZnO Nanowires from Thermal CVD - The Role of Carrier Gas Flow and Species Diffusion — •Andreas Menzel1, Raya Goldberg2, Guy Burshtein2, Victor Lumelsky2, Kittitat Subannajui1, Yeshayahu Lifshitz2, and Margit Zacharias1 — 1Laboratory for Nanotechnology, IMTEK - Department of Microsystems Engineering, University of Freiburg, Freiburg, Germany — 2Faculty of Materials Engineering and Russel Berrie Nanotechnology Institute, Technion Israel Institute of Technology, Haifa 32000, Israel
Nanowires (NWs) are promising materials for future electronics, optics and sensor device applications. Typically, ZnO NWs are grown in a tube furnace which includes that the respective material necessary for the desired NW materials is evaporated and transported toward a substrate. Hence evaporation efficiency, diffusion and gas flow are mandatory for a successful growth. When the transported species approaches the substrate nucleation, diffusion and growths occurs. A huge amount of work reports about growth of NWs by thermal CVD, however, the role and influence of growth parameters still remains unclear. Different parameters, geometries (diameters, inner and outer tube configurations etc.) as well as growth parameters (temperature, carrier gas and pressure) are reported, but cannot really be compared. We systematically studied and simulated the distribution of the growth species in such tube processes combined with growth experiments and evaluate their effects on the NW growth. Diffusion and convection can be tuned in a controlled way to achieve balanced steady growth conditions.