Regensburg 2013 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 97: ZnO
HL 97.4: Talk
Friday, March 15, 2013, 10:15–10:30, H16
Electrical and optical properties of room temperature deposited zinc tin oxide thin films and utilisation in all oxide amorphous heterodiodes — •Peter Schlupp, Friedrich Leonard Schein, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Germany
To provide cost-efficient and homogeneous oxide thin films it is desirable to use amorphous materials which can be deposited at room temperature (RT). Zinc tin oxide (ZTO) is a promising n-type channel material and is in contrast to the well explored amorphous transparent semiconducting oxide GaInZnO indium-free and with that less expensive. We present electrical and optical properties of RT-deposited ZTO thin films. The films were fabricated via pulsed laser deposition on glass substrates from an 1:2 ZnO:SnO2 target. The background gas ( O2, N2 or Ar) pressure was varied systematically from 3*10−4mbar to 0.1mbar. The resistivity can be tuned over several orders of magnitude, from insulating for high and low pressures down to 1.7*10−4 Ω m for intermediate pressure. All films investigated are X-ray amorphous. In the visible spectral range (400-800nm wavelength) the optical transmission is about Tvis=40−85%, depending on the fabrication partial pressure. Optimized ZTO layers were used to fabricate an all amorphous pin heterodiode consiting of ZnCo2O4 and ZTO. The rectification of the device is about 6*103 at U=±1V at RT. Further, temperature-dependent I-U characteristics will be discussed.