Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 97: ZnO

HL 97.8: Vortrag

Freitag, 15. März 2013, 11:30–11:45, H16

Ion-induced luminescence of radiation defects in ZnO — •Ronald Stübner¹, Jörg Weber¹, Daniel Severin², and Markus Bender² — ¹Technische Universität Dresden, Germany — ²Gesellschaft für Schwerionenforschung, Darmstadt, Germany

A study of ion-induced luminescence of ZnO at low temperatures is presented. Based on the distinct difference between photo- and ion-induced luminescence spectra, it is concluded that the ion-induced luminescence results from excitonic recombinations at irradiation induced native defects. By comparison of the properties of the observed luminescence features with the data known from the literature, these features are assigned to the so far unidentified I₁₀ defect (3.353 eV). The zinc interstitial is suggested as the possible origin of the I₁₀ line.