Regensburg 2013 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 97: ZnO
HL 97.9: Vortrag
Freitag, 15. März 2013, 11:45–12:00, H16
Irradiation studies on differently orientated ZnO thin films — •Florian Schmidt1, Holger von Wenckstern1, Stefan Müller1, Daniel Spemann2, and Marius Grundmann1 — 1Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig — 2Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Nukleare Festkörperphysik, Linnéstraße 5, 04103 Leipzig
Zinc oxide (ZnO) is a wide-bandgap semiconductor which is known for its high radiation hardness. The influence of proton bombardment on the incorporation of defects in ± c-oriented ZnO bulk crystals [1] and thin films [2] has been reported previously, no data are available regarding the exposure of differently orientated ZnO to protons. The orientation of the thin films is predetermined by the orientation of the sapphire substrates. We grew c-, a-, and m-plane ZnO thin films on a-, r-, m-plane sapphire, respectively, by pulsed laser deposition. To study the effect of radiation, the films were irradiated by 2.25 MeV protons with fluences ranging from 1 × 1013 cm−2 to 2 × 1014 cm−2 and characterized by means of C-V measurements, deep level transient spectroscopy (DLTS) and Laplace DLTS.
Proton irradiation generates a deep-level, labelled E4 in the literature [3], which was tentatively assigned to the oxygen vacancy. The generation rate of this defect in the ZnO thin films was determined.
[1] F. D. Auret et al., Appl. Phys. Lett., 79(19), 3074 (2001).
[2] F. Schmidt et al., Appl. Phys. Lett. 101, 012103 (2012).
[3] T. Frank et al., Appl. Phys. A 88, 141 (2007).