Regensburg 2013 – wissenschaftliches Programm
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KR: Fachgruppe Kristallographie
KR 4: Quantitative Materialanalyse (MI jointly with KR)
KR 4.5: Vortrag
Dienstag, 12. März 2013, 11:00–11:15, H5
Diffuse scattering and stacking faults in (Bi,Na)TiO3 single crystals — •Wolfgang Donner1, Marton Major1, and John Daniels2 — 1Fachbereich Materialwissenschaft, Technische Universität Darmstadt — 2School of Materials Science and Engineering, University of New South Wales, Sydney
In our previous work we found diffuse streaks in the x-ray diffraction from the single crystal relaxor BNT-4BT [1]. These streaks connect half-order reflections associated with octahedral tilts in the sample. The diffuse streaks and diffuse half-order peaks react upon the application of an external electric field. Similar diffuse scattering patterns had been found in electron diffraction [2] from pure BNT samples and were interpreted as arising from stacking faults in the octahedral tilt sequence. The stacking fault structure could also be viewed as a twin structure of two rhombohedral domains. Here we present results from simulations of the diffuse scattering pattern based on certain stacking faults in the R3c structure and show that the model can be applied to estimate the amount of stacking faults. The stacking fault probability in turn can be used to estimate the size of the nanopolar regions in BNT-BT giving rise to the relaxor behavior.
[1] J. Daniels, W. Jo, J. Rödel, D. Rytz and W. Donner, Appl. Phys. Lett. 98, 252904 (2011) [2] V. Dorcet, G. Trolliard, Acta Mat. 56, 1753 (2008)