KR 4: Quantitative Materialanalyse (MI jointly with KR)
Tuesday, March 12, 2013, 09:30–12:15, H5
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09:30 |
KR 4.1 |
Invited Talk:
Quantitative Röntgenspektrometrie für die Analyse nanostrukturierter Materialien — •Matthias Müller, Burkhard Beckhoff, Philipp Hönicke, Beatrix Pollakowski, Cornelia Streeck und Rainer Unterumsberger
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10:15 |
KR 4.2 |
Advances in Low Energy X-ray Analysis with state of the art Silicon Drift Detectors using EPMA, SEM and STEM — •T. Salge, R. Terborg, M. Falke, O. Tunckan, A. Kearsley, D. Pereira da Silva Dalto, M.J.O.C. Guimarães, R. Ferhati, I. Bjurhager, S. Turan, M.E.F. Garcia, and W. Bolse
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10:30 |
KR 4.3 |
Quantitative Analysis of Pyramid Textured Silicon Wafers and Size Dependence of Optical and Electronic Properties — •Jan Kegel, Heike Angermann, Uta Stürzebecher, Erhard Conrad, and Bert Stegemann
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10:45 |
KR 4.4 |
phase diagram of nano-hydride formation: consequences for hydrogen embrittlement — •Gerard Paul Leyson, Blazej Grabowski, Johann von Pezold, and Jörg Neugebauer
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11:00 |
KR 4.5 |
Diffuse scattering and stacking faults in (Bi,Na)TiO3 single crystals — •Wolfgang Donner, Marton Major, and John Daniels
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11:15 |
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15 min. break
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11:30 |
KR 4.6 |
Comparative Study of Ion Sputtering in XPS Depth Profiling for Thin Film Analysis. — •Andrey Lyapin, Stefan Reichlmaier, Saad Alnabulsi, Sankar Raman, John Moulder, Scott Bryan, and John Hammond
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11:45 |
KR 4.7 |
Analysis of impurity diffusion and recrystallisation processes of Fe and FeNi polycrystals with low energy electron microscopy — •Benjamin Borkenhagen, Gerhard Lilienkamp, and Winfried Daum
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12:00 |
KR 4.8 |
Microscopic Understanding of Ionic Thermophoresis — Mario Herzog, •Maren Reichl, Alexandra Götz, and Dieter Braun
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