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KR: Fachgruppe Kristallographie

KR 7: Resistive Switching (DS jointly with DF, KR, HL)

KR 7.3: Vortrag

Freitag, 15. März 2013, 10:00–10:15, H32

Cation defect engineering in SrTiO3 thin films by PLD with Verification and implication on memristive properties — Sebastian Wicklein¹, •Chencheng Xu¹, Alessia Sambri², Salvatore Amoruso², David Keeble³, Annemarie Köhl¹, Werner Egger⁴, and Regina Dittmann¹ — ¹Peter Grünberg Institut 7, Forschungszentrum Jülich GmbH, Germany — ²Università degli Studi di Napoli Federico II, Dipartimento di Scienze Fisiche & CNR-SPIN, I-80126 Napoli, Italy — ³University of Dundee, School of Engineering, Physics and Mathematics, Dundee DD1 4HN, Scotland — ⁴University Bundeswehr, D-85577 Munich, Germany

The origin of the c-axis expansion in homoepitaxial STO thin films is investigated by positron annihilation lifetime spectroscopy (PALS): Low laser fluence results in Ti vacancy rich sample while high laser fluence for the Sr vacancy rich sample.

XPS measurement on the ablated spot on the targets shows that increased laser fluence ablates more Ti. The ToF (Time of Flight) data from OES (optical emission spectrometry) indicate a preferred scattering of Ti because of background gas. The two effects together lead to tunable stoichiometry of the film.

In the MIM (metal insulator metal) structure Sr-rich films exhibit the most stable switching behavior and highest on/off ratio, while in the LC AFM (local conducting atomic force microscopy) switching the on/off ratio of Ti is the higest.