Regensburg 2013 – scientific programme
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KR: Fachgruppe Kristallographie
KR 7: Resistive Switching (DS jointly with DF, KR, HL)
KR 7.6: Talk
Friday, March 15, 2013, 10:45–11:00, H32
Practical guide for validated memristance measurements — •Nan Du1,2, Yao Shuai3, Wenbo Luo3, Christian Mayr4, Rene Schüffny4, Oliver G. Schmidt1,2, and Heidemarie Schmidt1 — 1TU Chemnitz, Faculty of Electrical Engineering and Information Technology, 09107 Chemnitz, Germany — 2Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany — 3Helmholtz Research Center Dresden-Rossendorf, 01328 Dresden, Germany — 4TU Dresden, Department of Electrical Engineering and Information Technology, 01062 Dresden, Germany
L.O. Chua predicted rather simple charge-flux curves for active and passive memristors and presented active memristor circuit realizations already in the 70s. However, despite the fact that memristors give rise to complicated hysteretic current-voltage curves, memristors are traced in current-voltage curves. Here we give a practical guide how to use normalized charge-flux curves for the prediction of current-voltage characteristics of memristors with stable electrical characteristics in dependence on the shape and amplitude of the input voltage or input current signals. In the case of memristive BiFeO3 thin film capacitor structures [1] the normalized charge-flux curves superimpose for different numbers of measurement points and a different measurement time per measurement point. Such normalized charge-flux curve can be used for the prediction of current-voltage characteristics of plastic synapses in neuromorphic systems [2]. [1] Y. Shuai et al., J. of Appl. Phys. 109, 124117-124117-4 (2011). [2] C. Mayr et al., NIPS 2012, in press.