Regensburg 2013 – scientific programme
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KR: Fachgruppe Kristallographie
KR 7: Resistive Switching (DS jointly with DF, KR, HL)
KR 7.9: Talk
Friday, March 15, 2013, 11:45–12:00, H32
Influence of thickness ratio on resistive switching in BiFeO3:Ti/BiFeO3 bilayer structures — •Tiangui You1, Wenbo Luo2, Yao Shuai1,2, Nan Du1, Danilo Bürger1,3, Ilona Skorupa3, Oliver G. Schmidt1,4, and Heidemarie Schmidt1 — 1Chemnitz University of Technology, 09107 Chemnitz, Germany — 2University of Electronic Science and Technology of China, 610054 Chengdu, China — 3Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany — 4IFW-Dresden, 01069 Dresden, Germany
Nonvolatile resistive switching in BiFeO3 (BFO) [1] has attracted increasing attention; however, the underlying resistive switching mechanism is still controversial which restricts its application in nonvolatile memory devices. BFO:Ti/BFO bilayer structures with a 540 nm thick BFO layer and different thickness of BFO:Ti layer were grown on Pt/Sapphire substrates by pulsed laser deposition using the same growth conditions. Circular Au top electrodes were prepared with magnetron sputtering. Au/BFO/Pt single layer structures show a symmetric I-V curve without hysteresis due to the formation of Schottky contacts at both the top and bottom interface. However, Au/BFO/BFO:Ti/Pt bilayer structures exhibit an obvious resistive switching behavior under both voltage polarities. The influence of the thickness of BFO:Ti on the conduction mechanisms in Au/BFO/BFO:Ti/Pt bilayer structures is discussed to reveal similarities and differences between single and bilayer structures.
Reference [1] Y. Shuai et al., J. Appl. Phys., 109, 124117(2011)