Regensburg 2013 – scientific programme
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MA: Fachverband Magnetismus
MA 15: Spintronics and Magnetic Semiconductors (jointly with HL)
MA 15.8: Talk
Tuesday, March 12, 2013, 11:15–11:30, H3
Magnetic control of channel conductance in Metal Semiconductor Field Effect Transistors with magnetic ZnO channel — •Tim Kaspar1, Danilo Bürger1, 2, Ilona Skorupa1, Artur Erbe1, Daniel Grimm2,3, Oliver G. Schmidt2,3, Manfred Helm1, and Heidemarie Schmidt2 — 1Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany — 2TU Chemnitz, Reichenhainer Str. 39, 09111 Chemnitz, Germany — 3IFW Dresden, Helmholtzstraße 20, 01069 Dresden, Germany
We focus on the development of ZnO based devices, e.g. Schottky diodes with a magnetic ZnO depletion region [1]. Our work is motivated by the observation of s-d exchange interaction in magnetic ZnO below 50 K. For ZnO:Co we have shown that the magnetoresistance depends on the magnetic ion concentration, the free electron concentration and temperature [2]. Here we focus on the control of conductance in Metal Semiconductor Field Effect Transistors (MESFETs)with diluted magnetic ZnO channels by applied external electrical and magnetic fields. Co-doped magnetic ZnO channel layers with a Co concentration of 5 at% have been deposited by pulsed laser deposition. Ag/Au gate and Ti/Au source and drain contacts have been structured by optical lithography. The characteristics of the MESFETs with magnetic channel in external perpendicular magnetic fields up to 1.8 T are presented.
[1] Qingyu Xu, H. S.et al., Jpn. J. Appl. Phys.49, 043002(2010)
[2] Qingyu Xu, H. S.et al., Phys. Rev. B.76, 134417(2007)