Regensburg 2013 – wissenschaftliches Programm

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MA: Fachverband Magnetismus

MA 20: Graphene: Characterization and devices (HL, jointly with DS, MA, O, TT)

MA 20.11: Vortrag

Mittwoch, 13. März 2013, 12:15–12:30, H17

Tailoring the graphene/silicon carbide interface for monolithic wafer-scale electronics — •Stefan Hertel¹, Daniel Waldmann¹, Johannes Jobst¹, Andreas Albert¹, Matthäus Albrecht¹, Sergey Reshanov², Adolf Schöner², Michael Krieger¹, and Heiko B. Weber¹ — ¹Chair for Applied Physics, Erlangen, Germany — ²ACREO AB, Kista, Sweden

The vision of graphene as future material for electronic devices is derived from impressive material parameters. However, it is evident that graphene will not readily take over the role of a semiconductor. In particular, an efficient switch is lacking due to graphene’s missing bandgap.

By focusing not only on the graphene layer, but considering the silicon carbide (SiC) substrate as an essential part of the system, we developed an easy scheme to fabricate transistors with high ON/OFF ratio - suited for logic - by tailoring the interface between SiC and the graphene layer [1]. Therefore we currently work with two graphene materials on SiC: as grown monolayer graphene (MLG) and hydrogen intercalated quasi-freestanding bilayer graphene (QFBLG). We proved the high-quality ohmic contact of MLG to n-type SiC and also characterized the Schottky-like behavior of QFBLG.

Using these components we are currently able to demonstrate transistors with ON/OFF ratios exceeding 104 at room temperature in normally-on and normally-off operation mode. We present a concept for inverters using a resistor-transistor logic scheme.

[1] S. Hertel et al., Nature Communications 3, 957 (2012)