Regensburg 2013 – scientific programme
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MA: Fachverband Magnetismus
MA 34: Surface and Interface Magnetism II (jointly with O)
MA 34.3: Talk
Thursday, March 14, 2013, 11:00–11:15, H33
Investigation of the Si/Fe interface with standing-wave excited HAXPES — •Sven Döring1, Michael Voigt2, Martina Müller2, Mihaela Gorgoi3, Daniel E. Bürgler2, and Claus M. Schneider1,2 — 1Experimentalphysik, Universität Duisburg-Essen, Lotharstr. 1, 47057 Duisburg — 2PGI-6, Forschungszentrum Jülich, 52425 Jülich — 3Helmholtz Zentrum Berlin für Materialien und Energie, Albert Einstein Str. 15, 12489 Berlin
The interface between the ferromagnet Fe and the semiconductor Si is supposed to be a crucial part of future spintronic devices. The possible formation of silicides and the degree of an intermixing between the layers at the interface has a large influence on the conductance and efficiency of spin-injecting currents from the metal layer into the semiconductor. Therefore, we studied the interface between thin MBE-grown layers of Si on Fe with standing-wave excited hard x-ray photoemission spectroscopy. This method gives us a chemically sensitive depth-profile of the sample with a depth-resolution of a few Å and we are able to compare the interface structure of samples that were grown under different conditions.
The Si/Fe sample systems were grown on top of multilayer mirrors that give rise to a high reflectivity and thus to strong modulations of the HAXPES signals. The Fe layer was grown as a wedge which enables us to perform rocking-curve experiments as well as so-called Swedge scans.