Regensburg 2013 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 50: Poster II

MA 50.7: Poster

Freitag, 15. März 2013, 10:30–13:30, Poster D

Development of a maganite-film-based AMR sensor for low magnetic fields using the planar Hall effect — •Camillo Ballani, Sebastian Hühn, Markus Jungbauer, Markus Michelmann, and Vasily Moshnyaga — I. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

The anisotropic magnetoresistance (AMR) is widely used for sensing of both direction and absolute value of magnetic fields. Besides conventionally used ferromagnetic metallic materials, like permalloy (Ni₈₀Fe₂₀), thin epitaxial manganite films, e.g. La_0.7(Sr_1−yCa_y)_0.3MnO₃, show large AMR ratios at temperatures slightly below T_C, which can be tuned close to room temperature by changing the Sr/Ca ratio.¹ For a special AMR geometry, called "planar Hall effect", the measured transverse voltage is directly proportional to the sample magnetization, M, thus allowing one to obtain very high field sensitivity at low fields H ≲ H_C. With the goal to achieve low H_C and high AMR ratios, we have grown thin manganite films on SrTiO₃ substrates with different orientations by metalorganic aerosol deposition technique and studied the dependence of planar Hall effect on the temperature and applied magnetic field. Using the optimized films, we developed a prototype of a manganite-film-based magnetic field sensor. Financial support from EU FP 7 Project IFOX (interfacing oxides) is acknowledged.

¹ J. Appl. Phys. 93, 6354 (2003)