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MI: Fachverband Mikrosonden

MI 4: Analytische Elektronenmikroskopie

MI 4.1: Hauptvortrag

Montag, 11. März 2013, 15:15–16:00, H5

Advanced IC failure analysis — •Frank Altmann, Michél Simon-Najasek, and Jörg Jatzkowski — Fraunhofer Center for Applied Microstructure Diagnostics (CAM), Halle, Germany

One of the major factors limiting the lifetime of integrated circuits is the occurrence of dielectric breakdowns in one of the circuit's field-effect transistors or capacitors. Process or stress related weaknesses in thin dielectrics can cause early failures in the gate or capacitor oxides. Physical analysis of failures caused by thin dielectric breakdowns can help to distinguish between process or overvoltage related root causes by analyzing the corresponding defect signature. Because of the small dimensions of dielectric breakdowns there is a high risk in modifying its original signature during localization procedure. A new approach based on Electron Beam Absorbed Current (EBAC) imaging within a Scanning Electron Microscope (SEM) will be introduced providing defect localization at extremely low dissipation power in the nW range preserving the original defect structure of thin dielectric breakdown failures. In order to optimize the performance of transistors and diodes there is a growing demand to investigate real dopant profiles to understand and correlate variations of the implant processes to the electrical performance of the devices. A new technique of advanced SEM imaging providing improved dopant contrast biasing the pn-junction combined with a reliable site specific cross section preparation based on precise mechanical grinding will be demonstrated.