MI 4: Analytische Elektronenmikroskopie
Montag, 11. März 2013, 15:15–17:00, H5
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15:15 |
MI 4.1 |
Hauptvortrag:
Advanced IC failure analysis — •Frank Altmann, Michél Simon-Najasek, and Jörg Jatzkowski
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16:00 |
MI 4.2 |
Strain Analysis of SiGe-based Field Effect Transistors by Nano Beam Electron Diffraction — •Daniel Erben, Knut Müller, Christoph Mahr, Marco Schowalter, Andreas Rosenauer, Josef Zweck, and Pavel Potapov
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16:15 |
MI 4.3 |
Generation and propagation of dislocations and cracks in GaN single crystals — •Ingmar Ratschinski, Hartmut S. Leipner, Wolfgang Fränzel, Gunnar Leibiger, Frank Habel, William Mook, and Johann Michler
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16:30 |
MI 4.4 |
Investigation of D3-like luminescence in mc-solar silicon — •Christoph Krause, Daniel Mankovics, Tzanimir Arguirov, and Kittler Martin
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16:45 |
MI 4.5 |
Recent developments in characterization of ultrafine-grained materials by EBSD — •Florian Heidelbach
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