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Regensburg 2013 – scientific programme

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MI: Fachverband Mikrosonden

MI 5: Quantitative Materialanalyse (mit KR)

Tuesday, March 12, 2013, 09:30–12:15, H5

09:30 MI 5.1 Invited Talk: Quantitative Röntgenspektrometrie für die Analyse nanostrukturierter Materialien — •Matthias Müller, Burkhard Beckhoff, Philipp Hönicke, Beatrix Pollakowski, Cornelia Streeck und Rainer Unterumsberger
10:15 MI 5.2 Advances in Low Energy X-ray Analysis with state of the art Silicon Drift Detectors using EPMA, SEM and STEM — •T. Salge, R. Terborg, M. Falke, O. Tunckan, A. Kearsley, D. Pereira da Silva Dalto, M.J.O.C. Guimarães, R. Ferhati, I. Bjurhager, S. Turan, M.E.F. Garcia, and W. Bolse
10:30 MI 5.3 Quantitative Analysis of Pyramid Textured Silicon Wafers and Size Dependence of Optical and Electronic Properties — •Jan Kegel, Heike Angermann, Uta Stürzebecher, Erhard Conrad, and Bert Stegemann
10:45 MI 5.4 phase diagram of nano-hydride formation: consequences for hydrogen embrittlement — •Gerard Paul Leyson, Blazej Grabowski, Johann von Pezold, and Jörg Neugebauer
11:00 MI 5.5 Diffuse scattering and stacking faults in (Bi,Na)TiO3 single crystals — •Wolfgang Donner, Marton Major, and John Daniels
  11:15 15 min. break
11:30 MI 5.6 Comparative Study of Ion Sputtering in XPS Depth Profiling for Thin Film Analysis. — •Andrey Lyapin, Stefan Reichlmaier, Saad Alnabulsi, Sankar Raman, John Moulder, Scott Bryan, and John Hammond
11:45 MI 5.7 Analysis of impurity diffusion and recrystallisation processes of Fe and FeNi polycrystals with low energy electron microscopy — •Benjamin Borkenhagen, Gerhard Lilienkamp, and Winfried Daum
12:00 MI 5.8 Microscopic Understanding of Ionic ThermophoresisMario Herzog, •Maren Reichl, Alexandra Götz, and Dieter Braun
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