Regensburg 2013 – wissenschaftliches Programm

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MI: Fachverband Mikrosonden

MI 7: Ion Beam Methods

MI 7.3: Vortrag

Mittwoch, 13. März 2013, 11:45–12:00, H5

Ultra-high 2D and 3D imaging SIMS with cluster ions - approaching the physical limits — •Sven Kayser, Felix Kollmer, Wolfgang Paul, Martin Krehl, and Ewald Niehuis — ION-TOF GmbH, Münster, Germany

Time-of-flight secondary ion mass spectrometry (TOF-SIMS) is a very sensitive surface analytical technique. It provides detailed elemental and molecular information about surfaces, thin layers, interfaces, and full three-dimensional analysis of the sample. One major improvement especially for the analysis of organic materials on a small scale was the introduction of cluster ion beams to the field. During the last years bismuth clusters have become the standard primary ion species for all imaging applications providing a lateral resolution of down to 80 nm. Recent developments of the emitter technology and the ion optics allow pushing the performance further towards the physical limits of the technique reaching a lateral resolution of down to 20 nm.

At the same time new sputter ion sources were developed using large argon clusters for dual beam depth profiling of organic materials. With the new sources the preservation of molecular information under high-dose sputtering conditions has become possible. This has enabled TOF-SIMS to do depth profiling and 3D analysis of organic materials.

In this contribution we will present the latest results in high-resolution TOF-SIMS imaging with bismuth primary ion clusters. We will also discuss examples from the field of organic electronics using the combination of bismuth and large argon clusters for analysis.