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MM: Fachverband Metall- und Materialphysik

MM 15: Poster Session

MM 15.44: Poster

Montag, 11. März 2013, 18:00–20:00, Poster E

Influence of defects on hydride formation in thin metal films — •Marc Waninger, Sönke Schmidt, and Astrid Pundt — Instiute of Material Physics, University of Goettingen, Friedrich-Hund-Platz 1, D-37077 Goettingen, Germany

Some metals are capable of absorbing hydrogen in the interstitial sites of the lattice. Additionally, microstructural defects (vacancies, grain boundaries, dislocations etc.) offer sites for hydrogen with binding energies, different from that of the interstitial sites[1].On the one hand hydrogen preferentially dissolves at these defects and they act as hydrogen traps. On the other hand, the incorporation of hydrogen in defects changes their mobility and reduces their repulsive interaction. For dislocations this is known as HELP mechanism, which is important for the hydrogen embrittlement.

In this study, indentation and argon ion bombardment are used to artificially create defects in thin metal films. Indentation is done by using the tip of an atomic force microscope (AFM) and results in dislocation rich volumes underneath the indent. Ar-ion bombardment results in a high density of interstitials and vacancies. These defect rich films are loaded with hydrogen from the gas phase. It is investigated by in-situ AFM, resistivity measurements and x-ray diffraction, if and how the defects affect the hydrogenation behavior of the films.

This research is kindly supported by SFB602, B12 and DFG PU131/9.

[1] A. Pundt, R. Kirchheim, Annual Review Materials Research*36* (2006) 555 - 608.