Regensburg 2013 – scientific programme

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MM: Fachverband Metall- und Materialphysik

MM 15: Poster Session

MM 15.68: Poster

Monday, March 11, 2013, 18:00–20:00, Poster E

In detail 3D Atom Probe investigation of Tantalum capped CoFeB layers — •Patrick Stender, Houari Bouchikhaoui, and Guido Schmitz — Institut of Materials Physics, WWU, Münster, Germany

The tunnel magnetoresistance (TMR) is an important physical effect used in current technology. The TMR ratio is influenced by various parameters. Very high TMR ratios can be obtained in CoFeB/MgO based magnetic tunnel junctions. However, the TMR is strongly influenced by the capping material. Choosing Tantalum as a capping material, the TMR can be increased drastically, after a defined heat treatment. We present an atom probe study of a model MgO/ CoFeB/Ta system. In the as-prepared state, the CoFeB layer exhibits an amorphous structure Different Isochronal and isothermal annealing sequences have been carried out to investigate the structural changes and reactions. Observed diffusion and segregation processes of Boron have been identified and quantified.