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MM: Fachverband Metall- und Materialphysik
MM 15: Poster Session
MM 15.75: Poster
Montag, 11. März 2013, 18:00–20:00, Poster E
Ultrathin TEM lamellae for low voltage Cs-corrected STEM — •Andriy Lotnyk, David Poppitz, Ulrich Roß, Jürgen W. Gerlach, Eric Thelander, and Bernd Rauschenbach — Leibniz Institute of Surface Modification, Permoserstr. 15, 04318 Leipzig, Germany
For high-resolution aberration-corrected (Cs-corrected) low voltage scanning transmission electron microscopy (STEM) the quality of investigated TEM samples is crucial. The TEM specimens should be thinner as 10 nm. Nowadays, widely used focused ion beam (FIB) preparation techniques cannot be employed in fabrication of thin TEM samples with a thickness less than 10 nm. In the present work, we investigate the preparation of different thin film materials and interface structures for analysis in low voltage Cs-corrected STEM using FIB lift-out method followed by low energy Ar-ion polishing (less than 1 kV) in a NanoMill low energy ion mill system. Using this approach we are able to routinely prepare large area TEM lamellae with thicknesses below 10 nm. The resulting TEM specimens are suitable for low voltage STEM. We have demonstrated atomic resolution by Cs-corrected STEM at 80 kV.