Regensburg 2013 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 15: Poster Session

MM 15.78: Poster

Montag, 11. März 2013, 18:00–20:00, Poster E

Investigation of metal droplets on dilute Bi-containing III-V semiconductors — •Eduard Sterzer, Nikolai Knaub, Peter Ludewig, Wolfgang Stolz, and Kerstin Volz — Material Sciences Center and Department of Physics, Philipps-University Marburg, Germany

Dilute bismuth (Bi)-containing III-V semiconductors are interesting from the application point of view, as Bi increases the spin-orbit splitting in conventional III-V semiconductors. The epitaxial growth of these materials is a big challenge due to the formation of metal droplets on the surface. In order to grow droplet free layers a better understanding of the formation process of these droplets is necessary. In this study the surface morphologies of Ga(BiAs)/GaAs structures grown by metal organic vapor phase epitaxy are investigated by scanning electron microscope and atomic force microscope (AFM). Energy dispersive X-ray spectroscopy was used to determine the composition of the droplets. Furthermore the crystal structure was analysed by transmission electron microscopy (TEM). In dependence on the V/III ratio as well as the growth temperature we observe pure Bi- droplets or mixed Ga-Bi droplets. The investigation of the morphology using AFM gives an indication of the droplets moving on the surface during growth. The crystal structure around the droplets and the structure of the droplets itself was investigated with transmission electron diffraction as well as high resolution TEM and will be correlated to the growth conditions.