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MM: Fachverband Metall- und Materialphysik
MM 20: Transport & Diffusion I
MM 20.2: Vortrag
Dienstag, 12. März 2013, 10:30–10:45, H26
Formation and growth of Cu3Si studied by SNMS — •Zoltán Balogh1, Mohammed Ibrahim1, Guido Schmitz1, Bence Parditka2, and Zoltán Erdélyi2 — 1Westfälische Wilhelms Universität-Münster Wilhelm Klemm Straße 10, Münster, D-48149 (Germany) — 2University of Debrecen PO Box. 2, Debrecen, H-4010 (Hungary)
Metal induced crystallization is one of the methods to reduce the crystallization temperature of amorphous Si films [1]. This can happen either by the bond weakening effect of eutectic forming materials or by assistance of metal-silicide template. Metal-Si solid state reactions also represent some of the very few examples in which a linear kinetics in the formation of an intermetallic layer is observed [2,3].
We investigated the formation and the subsequent growth of the Cu/Si reaction layer in sputter deposited thin films. Bilayers comprising 45 nm Cu on 120 nm a-Si were deposited upon Si <100> substrates and annealed at 135 ∘C under high vacuum conditions. XRD revealed that Cu3Si does grow as a result of the annealing. By SNMS and XPS investigations we found that (i) the Cu3Si layer is not present in the as-deposited layer, (ii) a 20 nm thick layer is quickly formed after very short annealing and that (iii) further growth appears linearly with significantly slower rate of 1 nm/h.
[1] Z. Wang et al., Adv. Eng. Mater., 11 (2009) 131.
[2] F.M. d’Heurle and P. Gas, J. Mater. Res., 1 (1986) 205.
[3] F. Nemouchi et al., Appl. Phys. Lett., 86 (2004) 041903.