Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MM: Fachverband Metall- und Materialphysik

MM 20: Transport & Diffusion I

MM 20.3: Vortrag

Dienstag, 12. März 2013, 10:45–11:00, H26

Growth kinetics and interface structure of copper silicides studied by atom probe tomography — •Mohammed Ibrahim, Zoltán Balogh, Patrick Stender, Mohammed Reda Chellali, and Guido Schmitz — Westfälische Wilhelms Universität-Münster Wilhelm Klemm Straße 10, Münster, D-48149 (Germany)

The production of crystalline Si films is important for numerous applications. In contact with some silicide forming components, the crystallization temperature of amorphous Si is significantly reduced [1]. Si deposited on Cu is also considered as a possible anode for high capacity Li-ion batteries. Solid state reaction between the Si and the Cu current collector results in the formation of copper-silicides [2]. Gaining information on the kinetics of this reaction is thus desired for many applications.

We investigated the early phases of the growth of Cu-silicides by laser assisted APT [3]. Cu and Si have been deposited upon field developed tungsten (W) tips. We found that an intermixed zone is already formed during the deposition. Its thickness strongly depends on the stacking order. The transition zone is broad in the case of Cu on Si and much sharper for Si on Cu. After annealing at 130 °C (from 30 min to 4 hours) we observe formation of a Cu3Si layer with few tens of nm thickness. Remarkably Si segregates to the free surface and to the Cu/Cu3Si interface.

[1] Z. Wang et al., Adv. Eng. Mater., 11 (2009) 131.

[2] H. Chen et al., J. Power Sources, 196 (2011) 6657.

[3] R. Schlesiger et al., Rev. Sci. Instrum., 81 (2010) 043703.