Regensburg 2013 – wissenschaftliches Programm

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MM: Fachverband Metall- und Materialphysik

MM 21: Topical Session: TEM-Symposium - HR Imaging & Analytic II

MM 21.1: Vortrag

Dienstag, 12. März 2013, 11:45–12:00, H4

Energy dispersive X-ray spectroscopy using silicon drift detectors in TEM; state and prospects — •Meiken Falke — Bruker Nano GmbH, Berlin, Germany

Energy dispersive X-ray spectroscopy (EDS) in the electron microscope uses characteristic X-rays for element identification, which are generated during the interaction of electrons with the sample. To detect a suitable amount of the X-rays generated by a small amount of matter is a challenge for EDS technology. Measures such as low dose techniques or low voltage and the demand for very fast analysis make the problem even more complicated. One part of the solution is to increase the solid angle for X-ray detection. Various approaches have been implemented. The better a sphere around the sample can be resembled, the more X-rays can be captured. Data from single and multiple chip EDS systems will be presented. Another solution for chemical analysis on the nanoscale and below is to combine the EDS-system development with adjustments in pole piece and EDS port geometry as well as in beam current quality and sample holder design. We will demonstrate that this approach can enable a solid angle of up to 1sr but also single atom X-ray spectroscopy even at a relatively low solid angle of 0.1sr using 60keV accelerating voltage to avoid radiation damage in graphene [1].

[1] T. C. Lovejoy et al., Appl. Phys. Lett.100, 154101 (2012).