Regensburg 2013 – scientific programme
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MM: Fachverband Metall- und Materialphysik
MM 56: Phase Transformations II
MM 56.2: Talk
Thursday, March 14, 2013, 12:00–12:15, H26
Simulation of rapid crystallization in phase change materials by means of phase field modeling — •Fatemeh Tabatabaei1, Markus Apel2, and Efim Brener1 — 1Peter Grünberg Institut (PGI-2), Forschungszentrum Jülich, 52428 Jülich — 2Access e.V., RWTH Aachen, 52072 Aachen
Phase change materials (PCM) are employed in data-storage applications extensively. A stable crystalline and a metastable amorphous state can be utilized for the data recording. To obtain a quantitative understanding of the kinetics of writing and erasing data, it is essential to gain insights into the energy transport and phase boundary movement during the phase transformation. We applied phase field modeling as a continuum simulation technique in order to study rapid crystallization processes in AgInSbTe. The simulation model is adapted to the experimental conditions, in particular the geometrical arrangement used for measurements of crystallization rates by a laser pulse technique. Simulations are performed for substrate temperatures close to the melting temperature of AgInSbTe down to low temperatures when an amorphous state is involved. Different growth regimes are identified by calculating crystallization velocity as a function of undercooling. We discussed the role of interface mobility on solidification kinetics by determining the mobility as a function of temperature. Furthermore, the role of nucleation of the crystalline phase as well as temperature dependent thermophysical properties are investigated.