Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 10: Nanostructures at Surfaces I

O 10.1: Talk

Monday, March 11, 2013, 10:30–10:45, H45

Realization of a single-atom transistor in silicon — •Martin Fuechsle, Jill A. Miwa, Suddhasatta Mahapatra, and Michelle Y. Simmons — Centre for Quantum Computation & Communication Technology, University of New South Wales, Sydney 2052, Australia

Scanning tunneling microscopy (STM) has been demonstrated to enable the positioning of individual atoms on metallic surfaces with unprecedented resolution [1]. However, the realization of atomic-scale logic circuits in silicon was hampered by the covalent nature of its bonds. While resist-based strategies allowed the formation of nanostructures on the silicon surface, truly atomic-scale devices, such as donor-based quantum computation devices [2], require the ability to position individual atoms within the silicon crystal with atomic precision. Here, we present a single-atom transistor based on an individual phosphorus donor patterned with a spatial accuracy of ± 1 lattice site within an epitaxial silicon environment. Using STM-based hydrogen lithography, the single impurity is deterministically placed between highly-doped transport electrodes. Low-temperature measurements confirm the presence of a single donor, the charge state of which can be precisely controlled with gate voltages. We find a charging energy that is similar to the value expected for isolated P donors in bulk silicon, previously only observed by optical spectroscopy. Our work presents an important step towards scalable donor-based quantum computer architectures.

[1] D.M. Eigler and E.K. Schweizer, Nature 344, 524 (1990); [2] B.E. Kane, Nature 393, 133 (1998).