Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 13: Focus Session: Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices (jointly with HL)
O 13.2: Talk
Monday, March 11, 2013, 15:30–15:45, H2
Anisotropic dielectric function and carrier density of rutile SnO2 — •Christian Lidig1, Karsten Lange1, Martin Feneberg1, Maciej Neumann2, Norbert Esser2, Mark E. White3, Min-Ying Tsai3, Oliver Bierwagen3,4, James S. Speck3, and Rüdiger Goldhahn1 — 1Otto-von-Guericke-Universität Magdeburg, Institut für Experimentelle Physik, Abteilung für Materialphysik — 2Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V. , Berlin — 3University of California, Santa Barbara, USA — 4Paul-Drude-Institut, Berlin
The anisotropic dielectric function of rutile SnO2 is presented from 0.04 eV up to 20 eV. The results were obtained on a sample grown on TiO2 having the optical axis in plane. After modelling the layer stack and taking surface roughness into account, the full dielectric function is extracted wich is compared with theoretical calculations. It turns out that electron-hole interaction influences the dielectric function up to 20 eV resulting in a pronounced redshift and redistribution of oscillator strength of features related to van Hove singularities.
Additionally, infrared spectroscopic ellipsometry was performed on a series of SnO2:Sb layers grown on r-plane sapphire. The plasmon- longitudinal optical phonon- coupling modes yield results for the free carrier concentrations which are discussed in detail.