Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 13: Focus Session: Crystalline n-type semiconducting oxides - SnO2, Ga2O3, and In2O3 for novel devices (jointly with HL)
O 13.6: Talk
Monday, March 11, 2013, 17:15–17:30, H2
Structural, optical and electrical properties of Si-doped β-β-Ga2O3 thin films — •Stefan Müller, Holger von Wenckstern, Florian Schmidt, Daniel Splith, and Marius Grundmann — Universität Leipzig, Semiconductor Physics Group, Institut für Experimentelle Physik II, Leipzig, Germany
The wide bandgap oxide semiconductor β-Ga2O3 (Eg = 4.9 eV at room temperature) is a promising material for realization of transparent optoelectronics like FETs [1] or solar-blind photodetectors.
In this contribution we present structural, optical and electrical properties of 1% SiO2-doped β-Ga2O3 thin films grown by pulsed-laser deposition (PLD) on c-plane sapphire substrates. The oxygen partial pressure was set between 3×10−4 and 0.024 mbar and the substrate temperature between 570∘C and 730∘C. The thin films are (2 0 1)-oriented if grown at low oxygen partial pressures and high temperatures. At a growth temperature of 730∘C and for oxygen partial pressures above 10−3 mbar additional orientations are visible in the XRD pattern. The transmissivity between 1100 nm and 280 nm is in the range of 80% for most investigated samples. However, the optical bandgap increases from 4.7 eV (0.04 mbar) to 4.9 eV (3× 10−4 mbar) with decreasing oxygen partial pressure. The maximal conductivity and electron mobility of our thin films is in the range of 20 S/m and 0.15 cm2/Vs, respectively.
[1] M. Higashiwaki et al., Appl. Phys. Lett. 100, 013504 (2012).