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Regensburg 2013 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 23: Graphene: Electronic Properties and Transport (jointly with HL, MA and TT)

Montag, 11. März 2013, 16:00–19:15, H17

16:00 O 23.1 Epitaxial silicene - tunable hybridization with the substrate and weak interactions with epitaxial organic overlayers — •Rainer Friedlein, Antoine Fleurence, Fabio Bussolotti, and Yukiko Yamada-Takamura
16:15 O 23.2 Ab initio study of graphene nano domes on Ir(111) surface — •Vasile Caciuc, Nicolae Atodiresei, and Stefan Blügel
16:30 O 23.3 Effects of strain on the excitonic Fano resonance in the optical spectrum of graphene — •Daniela Ullrich, Patrick Herlinger, Harald Giessen, Jurgen Smet, and Markus Lippitz
16:45 O 23.4 Probing Hot Electron Distributions in Graphene on Ni(111) with High Harmonic Radiation — •Carsten Winter, Thorben Haarlammert, Luca Bignardi, Petra Rudolf, and Helmut Zacharias
17:00 O 23.5 Reversible Photooxidation of Graphene — •Stefan Böttcher, Hendrik Vita, and Karsten Horn
17:15 O 23.6 Edge charge disorder in graphene — •Cornelie Koop, Manuel Schmidt, and Carsten Honerkamp
17:30 O 23.7 Electronic and magnetic properties of zigzag graphene nanoribbons on the (111) surface of Cu, Ag and Au — •Yan Li, Wei Zhang, Markus Morgenstern, and Riccardo Mazzarello
17:45 O 23.8 The atomic and electronic structure of well-defined graphene nanoribbons studied by scanning probe microscopy — •Joost van der Lit, Mark Boneschanscher, Mari Iljas, Ari Harju, Andreas Uppstu, Daniel Vanmaekelbergh, Peter Liljeroth, and Ingmar Swart
18:00 O 23.9 Intact Dirac cones at broken sublattice symmetry: photoemission study of graphene on Ni and Co — •Dmitry Marchenko, Andrei Varykhalov, Jaime Sánchez-Barriga, Markus R. Scholz, Bart Verberck, Björn Trauzettel, Tim O. Wehling, Carlo Carbone, and Oliver Rader
18:15 O 23.10 sp2 carbon hybrid junctionsPablo Robert, Renjun Du, Fan Wu, Kristina Hönes, Jens Mohrmann, Frank Hennrich, Manfred Kappes, Hilbert von Löhneysen, and •Romain Danneau
18:30 O 23.11 Graphene on boron nitride microwave transistors driven by graphene nanoribbon back-gatesChristian Benz, •Maximilian Thürmer, Fan Wu, Zeineb Ben Aziza, Jens Mohrmann, Hilbert von Löhneysen, Kenji Watanabe, Takashi Taniguchi, and Romain Danneau
18:45 O 23.12 Strong gate hysteresis in graphene on mica field effect devices — •Jens Mohrmann, Kenji Watanabe, Takashi Taniguchi, and Romain Danneau
19:00 O 23.13 Electron scattering and spin polarization at the graphene/Ni(111) interfaceAran Garcia-Lekue, Timofey Balashov, Marc Ollé, Gustavo Ceballos, Andrés Arnau, Pietro Gambardella, Daniel Sánchez-Portal, and •Aitor Mugarza
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