Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

O: Fachverband Oberflächenphysik

O 27: Organic Electronics and Photovoltaics II (jointly with CPP, DS, HL)

O 27.2: Talk

Tuesday, March 12, 2013, 09:45–10:00, H32

Homogeneity of thin ZnTPP-films on silicon measured with reflectance anisotropy spectroscopy and Raman spectroscopy — •Stephan Peter Kate¹, Simona Pop¹, Jörg Rappich², and Karsten Hinrichs¹ — ¹Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V., Albert-Einstein Str. 9, Berlin, 12489 Germany — ²Helmholtz-Zentrum for Materials and Energy GmbH, Kekulestraße 5, Berlin, 12489, Germany

Organic devices for electronic applications are an important field of research. To improve the efficiency of those components, the analysis of structure and homogeneity of thin films is of crucial importance. In this study we demonstrate that Reflectance Anisotropy Spectroscopy (RAS) and Raman spectroscopy are useful to investigate the homogeneity of thin films of zinc-tetra-phenyl-porphyrin (ZnTPP) on silicon substrates. The RAS spectra of the thin films show an optical anisotropy in the visible spectral range. Analyzing the anisotropy, conclusions about the homogeneity of the thin films can be drawn. The vibrational modes of the molecules seen with resonant Raman spectroscopy are sensitive to the film structure. A pyrrole-bending mode in the region of 1075 cm-1 serves us as a marker for the film homogeneity. The RAS and Raman results are correlated with AFM measurements.