Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 28: Focussed Session: Frontiers of Electronic Structure Theory III (jointly with HL and TT)

O 28.9: Talk

Tuesday, March 12, 2013, 13:30–14:00, H36

Many-body effects on the carrier dynamics of graphene — •Cheol Hwan Park — Department of Physics and Astronomy, Seoul National University, Seoul, Korea

It is very important to understand how a charge carrier in real materials interacts with other charge carriers or with the lattice vibration. In this presentation, I will explain that the measured carrier scattering rate versus energy behavior in graphene can be quantitatively described from first-principles calculations considering electron-electron interactions within the GW approximation and electron-phonon interactions within the Migdal approximation [1]. Then, I will show that our calculation can also explain (i) the mismatch between the extrapolations of the upper and lower Dirac cones in heavily doped graphene [2] and (ii) the significant deviation from linear energy dispersion in extremely low-doped graphene [3]. Last, I will show that first-principles calculations on the intrinsic electrical resistivity of graphene arising from electron-phonon interactions [4] can quantitatively explain the transport experiments on heavily doped graphene [5].

[1] C.-H. Park, F. Giustino, M. L. Cohen, and S. G. Louie, Phys. Rev. Lett. 99, 086804 (2007).

[2] C.-H. Park, F. Giustino, C. D. Spataru, M. L. Cohen, and S. G. Louie, Nano Lett. 9, 4234 (2009).

[3] D. A. Siegel, C.-H. Park, C. Hwang, J. Deslippe, A. V. Fedorov, S. G. Louie, and A. Lanzara, Proc. Nat. Acad. Sci. 108, 11365 (2011).

[4] C.-H. Park et al., in preparation.

[5] D. K. Efetov and P. Kim, Phys. Rev. Lett. 105, 256805 (2010).