Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 3: Graphene: Magnetic Fields (jointly with DS, HL, MA, and TT)
O 3.1: Talk
Monday, March 11, 2013, 09:30–09:45, H17
Quantum interference in an electron-hole graphene ring system — •Dmitri Smirnov, Hennrik Schmidt, and Rolf J. Haug — Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstr. 2 30167 Hannover, Germany
We analyze the electronic properties of a topgated monolayer graphene
ring. Micro-mechanical cleavage was used to place a flake on a Si/SiO2
substrate. The structuring and contacting was done via plasma etching
and electron beam lithography. An additional gate was placed on
top of one arm of the ring which allows us to control the charge
carrier concentration locally and additionally to create a pnp- (npn-)
junction inside the ring. The sample was measured in a He3 cryostat
and is identified as single layer graphene via magnetotransport measurements.
We observe Aharonov Bohm (AB) effect by sweeping the
magnetic field around 0 T. The period of the oscillations is approx.
16 mT which fits the size of the ring well. The AB-oscillations are
measured for different temperatures and the amplitude shows a
saturation for lower temperatures. We also observe the
AB-oscillations when a pnp-junction is created inside the ring. The
period is independent of the existence of a pnp-junction and stays
constant in all situations. We analyze the amplitude in dependence of
the charge carrier concentration. The absolute amplitude is constant
in the bipolar and unipolar region [1].
[1] D.Smirnov. et. al, Appl. Phys. Lett. 100, 203114 (2012).