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O: Fachverband Oberflächenphysik

O 32: Metal Substrates I

O 32.1: Vortrag

Dienstag, 12. März 2013, 10:30–10:45, H42

Energy transfer in inert gases-substrate interactions studied by Pt-SiOx-Si chemoelectronic thin film devices — •Michael Scheele, Ievgen Nedrygailov, Eckart Hasselbrink, and Detlef Diesing — Fakultät für Chemie, Universität Duisburg-Essen, 45117 Essen, Germany

Energy flow in chemical surface reactions comprise excitation and relaxation of reacting molecules as well as heating and electronic excitation of the substrate. On the other hand, molecules can also take up energy from a heated substrate. Both, energy loss of molecules to the substrate as well as energy take up from the substrate can be detected by means of chemoelectronic devices. These devices are thin film metal-semiconductor or metal-insulator-metal junctions with a top metal electrode of nanometer thickness acting as the substrate. The energy transfer from a heated metal film to a molecular beam of argon, helium or nitrogen can be monitored as a change of the device current driven by a constant bias voltage. The current changes can be a result of a temperature difference across the device. The sensitivity of the device can be tuned by the magnitude and the polarity of the bias voltage and the base temperature of the device.