Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)

O 35.39: Poster

Tuesday, March 12, 2013, 18:15–21:45, Poster B1

Thickness-dependent growth study of Bi on Au(111) — •Jeannette Kemmer, Jens Kügel, Pin-Jui Hsu, and Matthias Bode — Institute of Experimental Physics II, University Würzburg, Am Hubland, 97074 Würzburg

We have performed a growth study of ultra-thin Bi films on a Au(111) substrate. Upon Bi growth at room temperature the film morphology was determined with a home-built low-temperature Scanning Tunneling Microscope (STM). Within the thickness range between sub-monolayer coverage up to 3 atomic layers (AL) topographic images show various surface reconstructions, including the so-called (6 × 6)-structure at 0.5 AL which has been reported previously [1] and resembles the well-known Si(111)-7×7 reconstruction. In addition, our data show extended areas with one-dimensional superstructures, which are preliminary assigned to 2√3 × 2√3 R30^∘- and a larger 10√3 × 10√3 R30^∘- unit cells.

[1] J.H. Jeon et al., Surf. Sci. 603, 145 (2009).