Regensburg 2013 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

O: Fachverband Oberflächenphysik

O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)

O 35.43: Poster

Tuesday, March 12, 2013, 18:15–21:45, Poster B1

UV laser supported oxide removal from Si seed layers for thin-film Si solar cells — •Roman Bansen, Robert Heimburger, Franziska Schütte, Thomas Teubner, and Torsten Boeck — Leibniz Institute for Crystal Growth, 12489 Berlin, Germany

To achieve low temperature deposition of crystalline Si on glass for photovoltaic applications, a two-step process has been developed at Leibniz Institute for Crystal Growth. In the first step, amorphous Si films are crystallized at temperatures around 300°C by means of metal-induced crystallization. In the second step, they are used as templates for further Si deposition by steady-state solution growth. Between the two steps, during handling in high vacuum conditions, the templates form a thin layer of Si oxide. This is a major obstacle for the second step, as it hinders epitaxial growth. Conventionally, oxide desorption from Si is achieved by an annealing step above 800°C, a method which cannot be applied to glass substrates. We discuss several approaches involving in situ treatment of oxidized surfaces with UV laser irradiation in highly pure H2 atmosphere. One approach is the removal of Si oxide by ablation. Another approach involves the lowering of the oxide desorption temperature during simultaneous UV laser irradiation below the ablation threshold.