Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.45: Poster
Tuesday, March 12, 2013, 18:15–21:45, Poster B1
Bi2Se3 films on Si(111): Growth optimization and in-situ SPA-LEED measurements — •Michael Vyshnepolsky, Claudius Klein, Anja Hanisch-Blicharski, and Michael Horn-von Hoegen — Fakultät für Physik und Center for Nanointegration CENIDE, Universität Duisburg-Essen, Lotharstr. 1, D-47057 Duisburg, Germany
Employing high resolution spot profile analysis low energy electron diffraction (SPA-LEED), atomic force microscopy (AFM) and x-ray diffraction (XRD) we studied the growth of Bi2Se3 on Si(111). The films were prepared by thermal co- deposition of Se and Bi with a flux ratio of 10:1 at temperatures between 200 and 250 ∘C. The strain relaxation during the growth of the first quintuple layers was measured in-situ during deposition by tracking the (01)-spot position with SPA-LEED. At a thickness of 6 nm the Bi2Se3 film exhibits a lateral lattice parameter of 4.02 Å. The decrease of the spot width of the (00)-spot reflects that the crystal quality improves by post-growth annealing up to temperatures of 350 ∘C. This is also confirmed in the AFM measurements, where remaining Se wires disappear with higher annealing temperature. XRD measurements of Bi2Se3 films with thickness of 70-80 nm verifies the high film quality and also confirms the vertical lattice parameter of 28.63 Å.