Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)

O 35.48: Poster

Tuesday, March 12, 2013, 18:15–21:45, Poster B1

Characterization of Carbon-Nitrogen-codoped TiO₂ with XPS - influence of annealing temperature — •Julian Fischer, Christian Gebauer, Thomas Diemant, Joachim Bansmann, and R. Jürgen Behm — Institute of Surface Chemistry and Catalysis, Ulm University, D-89069 Ulm

TiO₂ has been used for photo-electrochemical applications, e.g., in water splitting. However, the large band gap of the material limits its efficiency in the optical regime. Doping of TiO₂ with carbon and nitrogen is expected to reduce the band gap of the material by inducing defect states (acceptor and donor states) in the band gap and increase the electrical conductivity [1].

The samples used in this study were prepared via a sol-gel process [2] using urea (nitrogen donor source) and tetrabutyl titanate as a precursor. The materials were finally calcined in a temperature regime ranging from 175^∘C to 400^∘C (3h) and afterwards measured by XPS to characterize their chemical composition; special attention was paid to the inclusion of C and N species into the TiO₂ lattice. The doping of the material can be traced back to two different species: (i) carbon doping is attributed to a C-O species and (ii) nitrogen doping to a Ti-O-N species.

[1] D. Chen et. al., Ind. Eng. Chem. Res. 2007, 46, 2741.

[2] H. Sun et. al., Ind. Eng. Chem. Res. 2006, 45, 4971.