Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)

O 35.64: Poster

Tuesday, March 12, 2013, 18:15–21:45, Poster B1

Investigation of the surface morphology of ultrathin hex- Pr₂O₃ on Si(111) — •Jari Rodewald¹, Henrik Wilkens¹, Sebastian Gevers¹, Marvin Zoellner², Thomas Schroeder², and Joachim Wollschläger¹ — ¹Fachbereich Physik, Universität Osnabrück, Barbarastraße 7, 49069 Osnabrück — ²IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

The surface morphology and chemical composition of hex-Pr₂O₃ grown by molecular beam epitaxy (MBE) on Si(111) is studied by Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED) and Auger Electron Spectroscopy (AES), respectively.
The samples were capped with an amorphous germanium layer, since hex-Pr₂O₃ is instable under ambient conditions. In a first step the removal of the capping layer is investigated. Perfect thermal removal was achieved for annealing at 500^∘C sample temperature in 10⁻⁶ mbar oxygen atmosphere. X-Ray Diffraction (XRD) reveals that the hexagonal structure of the entire praseodymia film is preserved during the removal process.
The Spot profile analysis resulted in a surface model consisting of single atomic step heights of the complete hex-Pr₂O₃ unit cell. Also, the grain size and terrace width are determined.