Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.67: Poster
Tuesday, March 12, 2013, 18:15–21:45, Poster B1
Surface investigation of ceria films on Si(111) after post deposition annealing — •Robert Oelke1, Henrik Wilkens1, Olga Schuckmann1, Reinhard Olbrich1, Marvin H. Zoellner2, Thomas Schroeder2, Michael Reichling1, and Joachim Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49069 Osnabrück, Germany — 2IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
The surface morphology of 250 nm crystalline CeO2(111) films grown on hex-Pr2O3/Si(111) annealed under UHV conditions was investigated with spot profile analysis low energy electron diffraction (SPA-LEED) and atomic force microscopy (AFM).
The two dimensional LEED pattern of the untreated sample exhibits triangular shaped reflexes due to surface facets, which is also confirmed by AFM measurements. Furthermore, the terrace width and single atomic step height are determined by an energy dependent analysis of the central diffraction spot profile.
Above an annealing temperature of 930 K the shape of the diffraction spots changes indicating that the surface facets vanish, which is also observed in the AFM images. Moreover, the AFM results show very large terraces.
Furthermore, several superstructures are observed at elevated temperatures indicating a periodic order of oxygen vacancies during reduction.