Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.70: Poster
Tuesday, March 12, 2013, 18:15–21:45, Poster B1
High Temperature Angle-Resolved Photoemission from Graphene — Søren Ulstrup1, •Marco Bianchi1, Richard C. Hatch1, Dandan Guan1, Alessandro Baraldi2,3, Dario Alfé4, and Philip Hofmann1 — 1Dep. of Physics and Astronomy, iNano Centre, Aarhus University, Denmark — 2Dep. of Physics and CENMAT, University of Trieste, Italy — 3Lab. TASC INFM-CNR, AREA Science Park, Trieste, Italy — 4Dep. of Physics and Astronomy, TYC@UCL, University College London, United Kingdom
The temperature-dependent electronic structure and electron-phonon coupling of weakly doped supported graphene is studied by angle-resolved photoemission spectroscopy at temperatures up to 1300 K. The finding of an extremely weak electron-phonon coupling is accompanied by the observation of a complex and dramatic change in the graphene carrier density and type. Ab-initio molecular dynamics simulations show that these changes can be related to the temperature-dependent dynamic interaction with the Ir(111) substrate and are mainly caused by fluctuations in the graphene-substrate distance.