Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)

O 35.71: Poster

Tuesday, March 12, 2013, 18:15–21:45, Poster B1

Defect creation in graphene by swift heavy ion irradiation — •Alexander Levish, Oliver Ochedowski, Hanna Bukowska, and Marika Schleberger — Universität Duisburg-Essen, Duisburg, Germany

Graphene, a single layer of carbon atoms arranged in a honeycomb lattice, is envisaged to play an important role in several future applications like semiconductor devices, solar cells, biosensors, fuel cells, etc. The irradiation of graphene with different kind of ions is still a new and promising way to alter the physical properties of graphene. In case of swift heavy ions (SHI) with kinetic energies in the MeV regime it has already been shown that SHI can be used to create closed bilayer edge structures on exfoliated single layer graphene sheets on a wide variety of substrates. Here, using Raman spectroscopy we will show that SHI can be used to create defects even in suspended graphene sheets. Moreover, atomic force microscopy is applied to study the formation of closed bilayer edge structures upon SHI irradiation. We demonstrate that this process is influenced by the crystalline quality of graphene as well as the orientation of the graphene lattice with respect to the ion trajectory.