Regensburg 2013 – scientific programme

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O: Fachverband Oberflächenphysik

O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)

O 35.73: Poster

Tuesday, March 12, 2013, 18:15–21:45, Poster B1

Hydrogenation of Graphene and Boron-doped Graphene — •Wei Zhao, Karin Gotterbarm, Olive Höfert, Christoph Gleichweit, Christian Papp, and Hans-Peter Steinrück — Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen

We studied the hydrogenation and dehydrogenation of pristine graphene and boron-doped graphene prepared on a Ni(111) surface. We used in-situ temperature programmed high-resolution XPS to study the degree of hydrogenation and the thermal stability of the resulting layer. B-doped graphene layers with differing boron contents of 0-5% were hydrogenated at 170 K by atomic hydrogen. Additionally we also studied graphene layers intercalated with gold and still found hydrogenation. Hydrogenation at elevated exposures led to etching of the graphene layer by the atomic hydrogen. This process is hampered by boron doping. After gold intercalation we found that the etching is suppressed.