Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.83: Poster
Tuesday, March 12, 2013, 18:15–21:45, Poster B1
Transfer of Ni grown graphene onto an insulating YSZ substrate — •Samuel Grandthyll1, Stefan Gsell2, Michael Weinl2, Matthias Schreck2, Stefan Hüfner1, Frank Müller1, and Karin Jacobs1 — 1Saarland University, Experimental Physics, 66041 Saarbrücken, Germany — 2Institute of Physics, University of Augsburg, 86135 Augsburg, Germany
Graphene has been grown epitaxially on several Ni(111)/YSZ/Si(111) multilayer samples by chemical vapor deposition (CVD) of the precursor acetone [1]. The aim was to use the nickel film (thickness approximately 150 nm) as a catalyst for precursor fragmentation and graphene growth. Once the graphene film has formed, the thin metal film can be removed by etching in order to transfer graphene onto the underlying YSZ (Yttria-Stabilized Zirconium oxide) insulator.
During this synthesis route the samples were characterized in each step by several techniques, such as X-ray Photoelectron Spectroscopy (XPS), X-ray Photoelectron Diffraction (XPD), Low Energy Electron Diffraction (LEED), and Fermi Surface Mapping (FSM) by Angular Resolved Ultraviolet Photoelectron Spectroscopy. The results reveal that the transfer of ordered graphene layers is possible by this preparation mechanism.
References:
[1] J. Phys.: Condens. Matter 24 (2012) 314204