Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.85: Poster
Tuesday, March 12, 2013, 18:15–21:45, Poster B1
Graphene growth by Faco-to-Face method and occurrence of step bunching process — •Philipp Ansorg, Thomas Druga, Martin Wenderoth, and Rainer G. Ulbrich — Institute of semiconductor physics, Göttingen, Germany
Studying the outstanding properties of graphene requires a reliable production process. We have grown epitaxial graphene on n-doped 6H-SiC(0001) under UHV conditions and determined the influence of temperature on graphene growth. In addition an experimental arrangement after Yu et al. [1], called Face-to-Face method, was used for the preparation of graphene. The quality of the sample surface was studied by Atomic Force Microscopy under ambient conditions. Domains of graphene up to 3× 30µ m2 are found. Besides determining optimal conditions for graphene growth we observed the mechanism of step bunching. The height of the final steps is equivalent to multiples of three times the height of a SiC-bilayer, pointing to a step bunching process of higher order. The width of the graphene domains corresponds to multiples of three times the width of substrate terraces first discovered by Hupalo et al. [2].
[1] X. Z. Yu, C. G. Hwang, C. M. Jozwiak, A. Köhl, A. K. Schmid and A. Lanzara, Phys. Rev. B 80 (2009), p. 041401
[2] M. Hupalo, E.H. Conrad and M. C. Tringides, Journal of Electron Spectroscopy and Related Phenomena 184 (2011), p. 100