Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Poster Session I (Metal, semiconductor and oxide substrates: structure and adsorbates; Graphene)
O 35.91: Poster
Tuesday, March 12, 2013, 18:15–21:45, Poster B1
N-doped single-layer graphene by conversion of aromatic self-assembled monolayers — •Oliver Reimer1, Nils-Eike Weber1, Stefan Wundrack2, Rainer Stosch2, and Andrey Turchanin1 — 1Faculty of Physics, University of Bielefeld, 33615 Bielefeld, Germany — 2Physikalisch-Technische Bundesanstalt, 38116 Braunschweig, Germany
N-doped graphene sheets are promising for applications in transparent conductive coatings, supercapacitors or as catalysts for oxygen reduction. However, controllable fabrication of this material is not yet well established. Here, we present a molecular route to N-doped single-layer graphene based on electron-beam-induced crosslinking of N-containing aromatic self-assembled monolayers on copper foils and their subsequent temperature-induced conversion into graphene. We characterize this conversion as well as structural and chemical properties of the formed graphene sheets by complementary surface science techniques (X-ray photoelectron microscopy, low energy electron diffraction) and Raman spectroscopy. Functional properties of the formed single-layer graphene are tested by electrical measurements on oxidized silicon wafers.