Regensburg 2013 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 36: Poster Session II (Organic films and electronics, photoorganics; Nanostructures; Plasmonics and nanooptics, Surface chemical reactions and heterogeneous catalysis, Surface dynamics )
O 36.51: Poster
Dienstag, 12. März 2013, 18:15–21:45, Poster B2
Characterization of Horizontally-aligned Carbon Nanotubes: Impact of Tip-induced Strain and Bias Voltage — •Parisa Bayat1, Raul D. Rodriguez1, Alexander Villabona1, Sascha Hermann2, Stefan E. Schulz2, and Dietrich R.T. Zahn1 — 1Semiconductor Physics, TU Chemnitz — 2ZfM, TU Chemnitz
Carbon nanotubes (CNTs) have attracted huge attention in the area of nanotechnology since the seminal work of Iijima in 1991. Several interesting examples of the advantages of CNTs like their high carrier mobility, remarkable thermal conductivity and significant mechanical strength have been demonstrated. The focus of this work is on the electrical properties of semiconducting single wall CNTs (SWCNTs) horizontally aligned between two pre-structured palladium electrodes in a field-effect transistor configuration. In this work we aim at investigating the role of tip-induced deformation of the SWCNTs by the AFM tip and the effect of bias voltage. Atomic force microscopy (AFM) in force spectroscopy mode, current sensing AFM, Kelvin force microscopy, and (tip enhanced) Raman spectroscopy are employed for the characterization. It was reported that the band structure of a carbon nanotube can be dramatically altered by mechanical strain reflected in examples such as the metallization of SWCNT by locally applying pressure. Theoretical works predict that band gap changes can range between +/-100 meV per 1% stretch, depending on CNT chirality. Our work aims at evaluating and verifying these predications. DFG-Research Unit 1713 "Sensoric Micro- and Nanosystems" SMINT is acknowledged for financial support.