Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 36: Poster Session II (Organic films and electronics, photoorganics; Nanostructures; Plasmonics and nanooptics, Surface chemical reactions and heterogeneous catalysis, Surface dynamics )
O 36.63: Poster
Tuesday, March 12, 2013, 18:15–21:45, Poster B2
Electronic characterization and ion induced modification of single layer MoS2 sheets — •Kolyo Marinov1, Oliver Ochedowski1, Nils Scheuschner2, Ulrike Hutten1, Janina Maultzsch2, and Marika Schleberger1 — 1Universität Duisburg-Essen, Duisburg, Germany — 2Technische Universität Berlin, Berlin, Germany
Ultrathin sheets of layered transition metal dichalcogenides like MoS2 have drawn much interest recently. While graphene lacks a band gap which complicates its integration in future semiconducting devices, MoS2 shows a transition from an indirect towards a direct band gap semiconductor in the case of single layer MoS2 sheets. It has already been demonstrated that the electron mobility matches Si and high on/off ratios of MoS2 devices can be achieved. We will present Kelvin probe force microscopy and *-photoluminescence data of single layer MoS2 exfoliated on SrTiO3. Our data shows a possible charge transfer and shift in the work function induced by the substrate. Furthermore, it will be shown how swift heavy ion irradiation can be used to taylor thin MoS2 sheets by creating rifts in the MoS2 sheet along the ion trajectory or creating folded MoS2 sheets which exhibit closed bilayer edges.