Regensburg 2013 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
O: Fachverband Oberflächenphysik
O 38: Topological Insulators (jointly with HL, MA, TT)
O 38.10: Talk
Wednesday, March 13, 2013, 11:45–12:00, H16
Comparing scattering processes in topological insulators and giant Rashba semiconductors — •Peter Lemmens1, Vladimir Gnezdilov2, Dirk Wulferding1, Patrik Recher3, Helmuth Berger4, Yoichi Ando5, Angela Möller6, R. Sankar7, and Fang-Cheng Chou7 — 1IPKM, TU-BS, Braunschweig — 2ILTPE, Kharkov, Ukraine — 3IMAPH, TU-BS, Braunschweig — 4EPFL, Lausanne, Switzerland — 5ISIR, Osaka, Japan — 6Dept. of Chemistry, Univ. Houston, USA — 7CCMS, National Taiwan Univ., Taipei, Taiwan
Using Raman scattering experiments we probe scattering processes in BiTeI and topological insulators. In the former systems the surface termination, either by Iodine - Bi or Tellur - Bi determines the low energy scattering properties. A comparison of these surface induced signals with effects seen in topological insulators leads to a considerable gain of understanding of scattering mechanisms and the respective role of symmetry. Work supported by DFG, B-IGSM and NTH School for Contacts in Nanosystems.