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O: Fachverband Oberflächenphysik

O 57: Graphene: SiC Substrates and Intercalation (jointly with HL, MA and TT)

O 57.1: Vortrag

Mittwoch, 13. März 2013, 16:00–16:15, H17

Molecular Doping of Epitaxial Graphene on SiC with flouro-fullerenes — •Martina Wanke^{1, 2}, Anton Tadich³, Mark Edmonds⁴, Yaou Smets⁴, Chris Pakes⁴, and Thomas Seyller^{1, 2} — ¹Institut für Physik, Technische Universität Chemnitz, Reichenhainer Strasse 70, 09126 Chemnitz, Germany — ²LS Technische Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, 91058 Erlangen — ³Soft-X-Ray-Beamline, Australian Synchrotron, 800 Blackburn Road, Clayton, VIC 3168, Australia — ⁴Scholl of Physics, La Trobe University, Physical Sciences 1, Bundoora, VIC 3086, Australia

Epitaxial graphene (EG) on SiC(0001) is intrinsically n-type doped due to charge transfer from the substrate surface [1,2]. Charge transfer doping with F4-TCNQ reduces the carrier concentration and increases the carrier mobility [2], but the stability of the molecular layer in ambient conditions is not given [2]. Molecules with a sufficiently high electron affinity are needed in order to achieve a significant reduction of the electron concentration in EG by surface transfer doping. The mechanism of surface transfer doping of diamond with C₆₀F₄₈ is well understood [3]. Using ARPES we investigated the surface transfer doping of EG with C₆₀F₄₈. A net p-type doping of EG was observed for higher coverages of the C₆₀F₄₈.
[1] T.Ohta et al., Science 313 (2006) 951; [2] J.Jobst et al., PRB 81 (2010) 195434; W.Chen et al., JACS 129 (2007) 10418; C. Coletti et al., PRB 81 (2010) 235401. [3] M. T. Edmonds et al., JCP 136 (2012) 124701.